Ultra-Broadband Light Trapping in Thin-Film Silicon Solar Cells Using Optimized Slanted Tooth-Shaped Gratings

Document Type : Original Article

Authors

1 Nanoscience and Nanotechnology Research Center, University of Kashan, Kashan, Iran

2 University of Kashan, Faculty of Electrical and Computer Engineering, Department of Electronics

Abstract

This superior performance originates from the advanced broadband light-trapping mechanism provided by the meticulously engineered slanted grating geometry with a 300 nm period, which substantially amplifies photon absorption while preserving outstanding electrical properties. These results establish a clear and practical route toward realizing cost-effective, ultrahigh-efficiency thin-film silicon solar cells for next-generation scalable photovoltaic applications.The global imperative to transition towards sustainable energy systems, driven by the critical need to combat climate change and meet escalating energy demands, has positioned solar photovoltaics (PV) as a cornerstone technology for the future energy landscape [1-3]. Solar energy possesses exceptional potential with theoretical capabilities exceeding 10²³ watts, while associated costs have experienced a remarkable 90% reduction over the past decade [4,5]. Within the photovoltaic domain, silicon solar cells maintain overwhelming market dominance with over 95% share, leveraging fundamental advantages including abundant raw material availability as the second most abundant element in Earth's crust, long-term stability exceeding 25 years, and mature processing technologies [6,7]. Recent advances have pushed silicon heterojunction solar cells to certified efficiencies of 26.81% with fill factors up to 86.59% on industry-grade silicon wafers [8], demonstrating continuous progress in conversion efficiency.

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